The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[20a-A24-1~9]15.4 III-V-group nitride crystals

Fri. Sep 20, 2024 9:00 AM - 11:30 AM JST
Fri. Sep 20, 2024 12:00 AM - 2:30 AM UTC
A24 (TOKI MESSE 2F)
Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Kohei Ueno(Univ. of Tokyo)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[20a-A24-1]Study on reverse tapered mesa formation of GaN on lattice-matched AlInN

〇Takayoshi Oshima1, Masataka Imura1, Yuichi Oshima1 (1.NIMS)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-A24-2]Improvement of hterointerface steepness of GaN/AlN Resonant Tunneling Diodes

〇Kazuki Takahashi1, Yuto Yamada1, Hirotaka Watanabe2, Yoshio Honda2,3,4, Hiroshi Amano2,3,4 (1.Graduate School of Eng., Nagoya Univ., 2.IMASS, Nagoya Univ., 3.Deep Tech Serial Innovation Center, Nagoya Univ., 4.IAR, Nagoya Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[20a-A24-3]Causes of leakage current of vertical GaN p-n junction diodes under reverse bias

〇Tomoaki Sumi1, Hiroyuki Handa1, Masahiro Ogawa1, Naohiro Tsurumi1, Junichi Takino1, Satoshi Tamura1, Yoshio Okayama1 (1.Panasonic Holdings Corp.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[20a-A24-4]Evaluation of the influence of buffer layer on BGaN growth on QST substrates

〇Atsuhiro Hayashi1, Shun Nishikawa1, Kota Matsumoto2, Norikazu Ito2, Taketoshi Tanaka2, Ken Nakahara2, Yoku Inoue1, Toru Aoki3, Takayuki Nakano1,3 (1.Shizuoka Univ., 2.ROHM, 3.R.I.E.Shizuoka Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[20a-A24-5]Evaluation of neutron detection characteristics of BGaN detectors grown on Si and QST substrate by using long wavelength neutron

〇Kosuke Ando1, Shun Nishikawa1, Tatsuhiro Sakurai1, Seiya Kawasaki2, Masahiro Hino4, Yoshio Honda5, Hiroshi Amano5, Kota Matsumoto6, Norikazu Ito6, Taketoshi Tanaka6, Ken Nakahara6, Yoku Inoue1, Toru Aoki3, Takayuki Nakano1,3 (1.Shizuoka Univ., 2.Nagoya Univ., 3.R.I.E., 4.KURNS, 5.IMaSS Nagoya Univ., 6.ROHM Co., Ltd.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-A24-6]Fabrication of GaInN-based green LED with PEDOT:PSS as a hole transport layer

〇(M1)Ryusei Sakamoto1, Yuma Kato1, Ryotaro Ito1, Satoshi Kamiyama1, Motoaki Iwaya1, Tetsuya Takeuchi1, Emi Matsuyama2, Atsushi Suzuki2 (1.Meijo Univ., 2.E&E Evolution Ltd.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-A24-7]500 nm GaInN edge-emitting laser diodes with bottom tunnel junctions

〇Rita Higashi1, Tetsuya Takeuchi1, Motoaki Iwaya1, Satoshi Kamiyama1 (1.Meijo Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-A24-8]Fabrication and characterization of circularly polarized InGaN LED structure

〇Yuki Murata1, Ichikawa Shuhei2,1, Toda Shintaro3, Fujiwara Yasufumi4,5,6, Kojima Kazunobu1 (1.Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.ULVAC Inc., 4.Research Organization of Science and Technology, Ritsumeikan Univ., 5.SANKEN, Osaka Univ., 6.R3 Institute of Newly-Emerging Science Design, Osaka Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-A24-9]【Absence】Proposal and Design of Light -Emitting and -Receiving Diodes

〇Yuuho Andou1, Shuhei Ichikawa1,2, Kazunobu Kojima1 (1.Osaka Univ., 2.Research Center for UHVEM)
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