[20a-A24-1~9] 15.4 III-V-group nitride crystals

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[20a-A24-4] Evaluation of the influence of buffer layer on BGaN growth on QST substrates

〇Atsuhiro Hayashi¹, Shun Nishikawa¹, Kota Matsumoto², Norikazu Ito², Taketoshi Tanaka², Ken Nakahara², Yoku Inoue¹, Toru Aoki³, Takayuki Nakano^1,3 (1.Shizuoka Univ., 2.ROHM, 3.R.I.E.Shizuoka Univ.)

Keywords:

BGaN,QST substrate