[20a-A24-1~9] 15.4 III-V-group nitride crystals

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-A24-7] 500 nm GaInN edge-emitting laser diodes with bottom tunnel junctions

〇Rita Higashi¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹ (1.Meijo Univ.)

Keywords:

semiconductor,Laser Diode,Bottom Tunnel Junction

Injection efficiency is expected to improve in light-emitting devices with bottom tunnel junction contacts. Recently, room-temperature oscillation at a wavelength of 450 nm and a threshold current density of 3.4 kA/cm² has been reported in a blue edge-emitting LD using a lower tunnel junction. On the other hand, there is no report of laser operation using a lower tunnel junction in the green region. In this study, an edge-emitting LD with a bottom tunnel junction and operating at wavelengths above 500 nm was fabricated and evaluated.