[20a-A31-1~11] 17.3 Layered materials

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[20a-A31-7] Patterning of Layered Semiconductor GeS₂ by Laser Photo-Oxidation

〇(M2)Shohi Tahara¹, Keiji Ueno², Ryo Nouchi¹ (1.Osaka Metro. Univ., 2.Saitama Univ.)

Keywords:

two-dimensional semiconductor,GeS2,laser patterning

Patterning of two-dimensional semiconductors is an essential technique for practical applications. In this talk, we report the local photo-oxidation of GeS₂, a two-dimensional semiconductor, by laser light, which can be further processed by etching the formed Ge oxide with water. Patterning techniques based on lithographic processes are widely used; however, they suffer from process-induced damage, resist residues, and low throughput. The present results could lead to an efficient micropatterning technique for Ge-based systems.