Session Details

[20a-A31-1~11]17.3 Layered materials

Fri. Sep 20, 2024 9:00 AM - 12:00 PM JST
Fri. Sep 20, 2024 12:00 AM - 3:00 AM UTC
A31 (TOKI MESSE 3F)
Tomo-o TERASAWA(JAEA)

[20a-A31-1]Interface and Surface Analysis of WS2/Graphene Heterostructures on SiC substrate

〇Yui Ogawa1, Ufuk Erkilic1, Shengnan Wang1, Yoshitaka Taniyasu1 (1.NTT BRL)

[20a-A31-2]Quasi-one-dimensional moiré in large-angle twisted bilayer WTe2

〇Xiaohan Yang1, Limi Chen2, Yijin Zhang1, Kohei Aso2, Wataru Yamamori3, Rai Moriya1, Kenji Watanabe4, Takashi Taniguchi4, Takao Sasagawa3, Yukiko Yamada-Takamura2, Oshima Yoshifumi2, Tomoki Machida1 (1.IIS Univ. Tokyo, 2.JAIST, 3.Tokyo Tech., 4.NIMS)

[20a-A31-3]Observation of phase transformation and domain wall dynamics of ferroelectric SnS thin film by POM

〇Satsuki Kitamura1, Nanae Ryo1, Nishimura Tomonori1, Kanahashi Kaito1, Nagashio Kosuke1 (1.UTokyo)

[20a-A31-4]TEM atomic resolution analysis of effect of interface layer on crystallographic orientation of MoS2 on sapphire substrate

〇Emi Kano1, Toshiki Yasuno1, Xu Yang1, Yoshiki Sakuma2, Nobuyuki Ikarashi1 (1.Nagoya Univ., 2.NIMS)

[20a-A31-5]Study on the generation of bubble structure depending on polymer stamp pressing conditions

〇(M1)Daichi Kokubo1, Ayumi Shimizu1, Kou Aoyagi1, Hiroyuki Mogi1, Yusuke Arashida1, Shoji Yoshida1, Osamu Takeuchi1, Hidemi Shigekawa1 (1.Univ. of Tsukuba)

[20a-A31-6]The influence of exfoliation implemented with Au on layered materials like graphene

〇Aoi Hamada1,2, Chao Tang1,3, Koichi Tamura1,2, Akira Sato1, Taiichi Otsuji1 (1.RIEC, Tohoku Univ., 2.Graduate School of Engineering, Tohoku Univ., 3.FRIS, Tohoku Univ.)

[20a-A31-7]Patterning of Layered Semiconductor GeS2 by Laser Photo-Oxidation

〇(M2)Shohi Tahara1, Keiji Ueno2, Ryo Nouchi1 (1.Osaka Metro. Univ., 2.Saitama Univ.)

[20a-A31-8]Atomic Layer Etching of the Quantum Spin Hall Insulator WTe2 Towards the Study of Topological Josephson Junction Devices

〇(P)Michael Daniel Randle1, Russell Deacon1,3, Manabu Ohtomo2, Masayuki Hosoda2, Kenji Watanabe4, Takashi Taniguchi5, Shota Okazaki6, Takao Sasagawa6, Kenichi Kawaguchi2, Shintaro Sato2, Koji Ishbashi1,3 (1.Advanced Device Laboratory, RIKEN, 2.Fujitsu Research, Fujitsu Ltd., 3.RIKEN Center for Emergent Matter Science (CEMS), 4.Research Center for Electronic and Optical Materials, NIMS, 5.Research Center for Materials Nanoarchitectonics, NIMS, 6.Laboratory for Materials and Structures, TIT)

[20a-A31-9]Development of a Spatially Selective Patterning Method for Janus TMDs

〇DINGKUN BI1,2, Weizi Lu1,2, Soma Aoki1,2, Tianyishan Sun1,2, Hiroto Ogura1,2, Toshiaki Kato1,2 (1.Grad. Sch. of Eng., Tohoku Univ., 2.AIMR, Tohoku Univ.)

[20a-A31-10]Intercalation of Metal Atoms into W6Te6 Atomic Nanowires and The Optical Properties

〇(D)Ryusuke Natsui1, Yusuke Nakanishi1, Zheng Liu2, Nguyen Tuan Hung3, Yung-Chang Lin2, Takahiko Endo1, Kazu Suenaga4, Riichiro Saito3, Yasumitsu Miyata1 (1.Tokyo Metropolitan Univ., 2.AIST, 3.Tohoku Univ., 4.Osaka Univ.)

[20a-A31-11]Characterization of excitonic properties of anisotropic monolayer MoS2 Suspended Structures

〇(M1)Ko Aoyagi1, Daichi Kokubo1, Ayumi Shimizu1, Mogi Hiroyuki1, Yusuke Arashida1, Shoji Yoshida1, Osamu Takeuchi1, Hidemi Shigekawa1 (1.Univ. of Tukuba)