[20a-P05-1~3] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[20a-P05-2] Detection and characterization of photoelectrons from bottoms of Si trench structures

〇(M1)Shiika Murase¹, Tomoki Higashi¹, Inagaki Kouji¹, Arima Kenta¹ (1.Osaka Univ.)

Keywords:

semiconductor surface,three dimensional structure,X-ray photoelectron spectroscopy

In recent years, semiconductor devices have become highly integrated by making full use of three-dimensional structures. In the device manufacturing process, it is an urgent task to understand the behavior of adsorbates on a semiconductor surface that constitutes a narrow gap. We propose a method to nondestructively evaluate the surface condition of the bottom by combining a sample preparation method in which a different element is embedded in the bottom of a high aspect ratio structure and angle-resolved X-ray photoelectron spectroscopy measurement. Here, we describe the results for a Si trench structure to demonstrate the possibility of our proposed method.