Session Details
[20a-P05-1~3]13.1 Fundamental properties, surface and interface, and simulations of Si related materials
Fri. Sep 20, 2024 9:30 AM - 11:30 AM JST
Fri. Sep 20, 2024 12:30 AM - 2:30 AM UTC
Fri. Sep 20, 2024 12:30 AM - 2:30 AM UTC
P05 (Exhibition Hall A)
PR
[20a-P05-1]Electrochemical Evaluation of Noble Metal Catalyzed Wet Si Etching
〇Sota Yoshihira1 (1.Kansai Univ.)
[20a-P05-2]Detection and characterization of photoelectrons from bottoms of Si trench structures
〇(M1)Shiika Murase1, Tomoki Higashi1, Inagaki Kouji1, Arima Kenta1 (1.Osaka Univ.)
[20a-P05-3]Theoretical analysis of photo-induced conductivity in TMDC and black phosphorus
〇(M1)Akira Nakanishi1, Satofumi Souma1 (1.Kobe Univ.)