[20a-P06-1~6] 13.3 Insulator technology

[20a-P06-3] Effect of UV-Ozone treatment on Al₂O₃/GeO₂ films using ALD method

〇Tomoki Yoshida¹, Yoshiharu Kirihara¹, Sorato Mikawa¹, Ryousuke Ishikawa¹, Hiroshi Nohira¹ (1.Tokyo City Univ.)

Keywords:

UVOzone treatment,Atomic Layer Deposition

Recently, Interface Dipole Modulation (IDM) has been observed in amorphous HfO2/atomic layer thickness TiOx/SiO2 stack structures, and IDM has also been confirmed in Al2O3/TiOx/SiO2 stack structures. IDM can be applied to MOSFET structures to realize neuromorphic devices. For higher device performance, it is expected to be realized in Ge, which has higher carrier mobility than Si. For mass production of devices, Atomic Layer Deposition (ALD) is advantageous in terms of cost, but it has been reported that there are some problems such as deposition delay on thermally oxidized SiO2. Recently, it has been reported that UV-Ozone (UVO) treatment before ALD does not cause deposition delay and provides good surface roughness. In this study, for the fabrication of IDM devices on Ge substrates, we investigated the effect of UVO treatment on the deposition rate of Al2O3 deposited by ALD method on GeO2/Ge oxide structures.