Session Details

[20a-P06-1~6]13.3 Insulator technology

Fri. Sep 20, 2024 9:30 AM - 11:30 AM JST
Fri. Sep 20, 2024 12:30 AM - 2:30 AM UTC
P06 (Exhibition Hall A)

[20a-P06-1]Elucidation of the mechanism of interface dipole modulation in Al2O3/SnOx/SiO2 structures

〇Yoshiharu Kirihara1, Sorato Mikawa1, Kota Miura1, Tomoki Yoshida1, Shunichi Ito1, Akira Yasui2, Ryousuke Ishikawa1, Hiroshi Nohira1 (1.Tokyo City Univ., 2.JASRI)

[20a-P06-2]Demonstration of the operation of interface dipole modulation devices fabricated by ALD method on UV-Ozone treated SiO2

〇Sorato Mikawa1, Yoshiharu Kirihara1, Kota Miura1, Tomoki Yoshida1, Akira Yasui2, Ryousuke Ishikawa1, Hiroshi Nohira1 (1.Tokyo City Univ, 2.JASRI)

[20a-P06-3]Effect of UV-Ozone treatment on Al2O3/GeO2 films using ALD method

〇Tomoki Yoshida1, Yoshiharu Kirihara1, Sorato Mikawa1, Ryousuke Ishikawa1, Hiroshi Nohira1 (1.Tokyo City Univ.)

[20a-P06-4]Study on Al2O3/Ge MOS interface by ozone oxidation

〇Daiki Takahashi1, Nobuyuki Aoki1, Mengnan Ke1 (1.Chiba Univ.)

[20a-P06-5]Energy barrier for jumping of ions and molecules in SiNx and SiOx films

〇Tomoki Oku1, Masahiro Totsuka1, Hajime Sasaki1 (1.Mitsubishi Electric)