[20a-P06-1~6] 13.3 Insulator technology

[20a-P06-4] Study on Al₂O₃/Ge MOS interface by ozone oxidation

〇Daiki Takahashi¹, Nobuyuki Aoki¹, Mengnan Ke¹ (1.Chiba Univ.)

Keywords:

MOS interface,Germanium