[20a-P06-1~6] 13.3 Insulator technology

[20a-P06-5] Energy barrier for jumping of ions and molecules in SiN_x and SiO_x films

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric)

Keywords:

moisture resistance,silicon nitride,molecular orbital calculation

The influence of ions and molecules on the moisture resistance deterioration of the protective film was analyzed from the viewpoint of inter-site and vacancy-vacancy jumping of ions and molecules in the protective film. Considering the ion/molecular radius, the SiN_x film has a higher atomic density, so the short interstitial distance at the interstitial positions prevents the formation of barriers, while the surrounding atomic density is high at the vacancy positions. Calculated results showed that ions with larger radii form stronger bonds and create larger barriers for jumping to neighboring sites.