[20a-P06-1~6] 13.3 Insulator technology

[20a-P06-6] Structure change and reduction of OH group amount in low-temperature Si oxide films annealed by NH₃ gas with the addition of water H₂O vapor

〇Susumu Horita¹ (1.JAIST)

Keywords:

Si oxide film,low-temperature formation,OH

It is desired that deposited Si oxide (SiOx) films are formed at lower temperature. But, their dielectric property is gotten worse because large amounts of residual OH bonds exist in them. For this problem, using not only a main annealing gas of NH₃ and N₂ mixed gas, which has already been reported to be very effective for reduction of OH bonds, but also water H₂O vapor gas, we tried to anneal SiOx films deposited at 190^oC, 10 min. As a result, with one annealing condition of temperature of 130^oC and time of 60 min, we can reduce the amount of residual OH bonds more than that without H₂O vapor. Also, a relatively large change was found in structure of the annealed SiOx film with H₂O vapor.