[20p-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[20p-A22-1] [The 56th Young Scientist Presentation Award Speech] Characterization of temperature dependence of Schottky barrier height in Ni/β-Ga₂O₃ combined with XPS study on valence band structure of β-Ga₂O₃

〇Akihira Munakata¹, Kohei Sasaki², Kentaro Ema², Yoshiaki Nakano¹, Masaki Kobayashi¹, Takuya Maeda¹ (1.Univ. of Tokyo, 2.Novel Crystal Technology, Inc.)

Keywords:

gallium oxide,barrier height,Schottky

We have previously reported that the temperature dependence of the barrier height of β-Ga₂O₃ Schottky barrier diodes (SBDs) was consistently obtained over a wide temperature range from I-V, C-V and IPE measurement. The temperature dependence of the valence band maximum (VBM) was also investigated by XPS. In this presentation, we will discuss quantitatively the temperature coefficient of the barrier height and the temperature dependence of VBM.