[20p-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices" | The 85th JSAP Autumn Meeting 2024

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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-A22-1~13]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Sep 20, 2024 1:00 PM - 4:30 PM JST
Fri. Sep 20, 2024 4:00 AM - 7:30 AM UTC

A22 (TOKI MESSE 2F)

Toshiyuki Kawaharamura(Kochi Univ. of Tech.)

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[20p-A22-1][The 56th Young Scientist Presentation Award Speech] Characterization of temperature dependence of Schottky barrier height in Ni/β-Ga₂O₃ combined with XPS study on valence band structure of β-Ga₂O₃

〇Akihira Munakata¹, Kohei Sasaki², Kentaro Ema², Yoshiaki Nakano¹, Masaki Kobayashi¹, Takuya Maeda¹ (1.Univ. of Tokyo, 2.Novel Crystal Technology, Inc.)

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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[20p-A22-2]Exploring of Thin Film Growth and Lattice Matching of α-(In, Fe)₂O₃ and α-(In, Ga)₂O₃ on LiNbO₃ Substrates

〇Kazuki Shimazoe¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst. Tech.)

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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[20p-A22-3]Sn-Doped β-Ga₂O₃ Epitaxial Layer Grown by Liquid Phase Epitaxy

〇Zhijin Chen¹, Hiroaki Tadokoro¹, Taro Takakura¹, Miyuki Miyamoto¹, Susumu Innan¹, Teruo Kamura¹ (1.Mitsubishi Gas Chemical)

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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[20p-A22-4]Homo-epitaxial growth on the β-Ga₂O₃ (011) substrate by HVPE

〇Kentaro Ema¹, Chia-Hung Lin¹, Yuki Ueda¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[20p-A22-5]Investigation of activation annealing condition of β-Ga₂O₃ HVPE epitaxial wafer

〇Lin ChiaHung¹, Kengo Obayashi¹, Tomoka Nishikawa¹, Kentaro Ema¹, Yoshihiro Yamashita¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[20p-A22-6]Growth rate control of β-Ga2O3 crystal growth in OVPE method using thermodynamic calculations

〇TOMOHIRO SHIRAISHI¹, IMANISHI MASAYUKI¹, HOSOKAWA KEISUKE¹, USAMI SHIGEYOSHI¹, MORI YUSUKE¹ (1.Osaka Univ.)

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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[20p-A22-7]X-ray topographic characterization of β-Ga₂O₃ crystals grown by vertical Bridgman method

〇Hirotaka Yamaguchi¹, Yukako Kato¹, Takuya Igarashi², Yuki Ueda², Kimiyoshi Koshi², Shinya Watanabe², Shigenobu Yamakoshi², Akito Kuramata² (1.AIST, 2.Novel Crystal Technology, Inc.)

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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[20p-A22-8]Demonstration of vertical power devices of (001) β-Ga₂O₃ grown by MOCVD

〇Kentaro Ema¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[20p-A22-9]Study on NiO/β-Ga₂O₃ heterojunctions grown by MBE technique

〇Hirotaka Yamaguchi¹, Hitoshi Tampo¹, Takehiko Nagai¹, Yoshiaki Nakata², Kohei Sasaki² (1.AIST, 2.Novel Crystal Technology, Inc.)

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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[20p-A22-10]Anomalous Carrier Profile and Its Mobility in β-Ga₂O₃Induced by Chlorine-Based Dry Etching

〇Takafumi Kamimura¹, Masataka Higashiwaki^1,2 (1.NICT, 2.Osaka Metropolitan Univ.)

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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[20p-A22-11]Optical properties of selective-area-grown α-Ga₂O₃ on c-plane sapphire

〇Riena Jinno¹, Sangmin Ji², Natthajuks Pholsen¹, Hideo Otsuki¹, Satoshi Iwamoto^1,2 (1.RCAST Univ. Tokyo, 2.IIS Univ. Tokyo)

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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Highlighted Presentation

[20p-A22-12]Fabrication of single-mode α-Ga₂O₃ waveguides and observation of the light propagation in the visible region

〇(M2)Koudai Iijima¹, Hideo Otsuki¹, Sangmin Ji², Riena Jinno^1,3, Susumu Fukatsu³, Satoshi Iwamoto^1,2 (1.RCAST U-Tokyo, 2.IIS U-Tokyo, 3.Graduate School of Arts and Sciences U-tokyo)

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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[20p-A22-13]Design of photnic crystal nanobeam cavity in gallium oxide

〇Jewook Jeon¹, Koudai Iijima¹, Nao Harada¹, Sangmin Ji², Riena Jinno¹, Satoshi Iwamoto^1,2 (1.RCAST U-Tokyo, 2.IIS U-Tokyo)

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