[20p-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[20p-A22-10] Anomalous Carrier Profile and Its Mobility in β-Ga₂O₃ Induced by Chlorine-Based Dry Etching

〇Takafumi Kamimura¹, Masataka Higashiwaki^1,2 (1.NICT, 2.Osaka Metropolitan Univ.)

Keywords:

Ga2O3,defect,MOS capacitor

After BCl₃ RIE treatment on the Si ion-implanted β-Ga₂O₃ (010) substrate surface, a MOS capacitor was fabricated and its carrier profile (N_d - N_a) was evaluated. The depth profile of N_d - N_a was significantly lower than the value calculated by SRIM, and furthermore, the depth profile of N_d - N_a changed with negative bias application and light irradiation. This suggests that defects induced by the RIE process are involved in the deactivation of Si donors and that the defects are mobile.