[20p-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Highlighted Presentation

[20p-A22-12] Fabrication of single-mode α-Ga₂O₃ waveguides and observation of the light propagation in the visible region

〇(M2)Koudai Iijima¹, Hideo Otsuki¹, Sangmin Ji², Riena Jinno^1,3, Susumu Fukatsu³, Satoshi Iwamoto^1,2 (1.RCAST U-Tokyo, 2.IIS U-Tokyo, 3.Graduate School of Arts and Sciences U-tokyo)

Keywords:

Gallium oxide,Dry etching,VIsible light waveguide

Gallium oxide (Ga₂O₃), an ultra-wide bandgap semiconductor, is being explored for its potential in optical integrated circuits operating in the near-ultraviolet to visible spectrum due to its transparency across a broad wavelength range. Although visible light waveguides have been demonstrated in β-Ga₂O₃, discussions on single-mode characteristics and interfaces for out-of-plane coupling are limited.In this study, we focus on α-Ga₂O₃, which possesses a wider bandgap and higher refractive index than β-Ga₂O₃. We successfully fabricated α-Ga₂O₃ waveguides that operate in the visible light region and achieved light waveguiding through out-of-plane coupling.