[20p-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[20p-A22-3] Sn-Doped β-Ga₂O₃ Epitaxial Layer Grown by Liquid Phase Epitaxy

〇Zhijin Chen¹, Hiroaki Tadokoro¹, Taro Takakura¹, Miyuki Miyamoto¹, Susumu Innan¹, Teruo Kamura¹ (1.Mitsubishi Gas Chemical)

Keywords:

Gallium Oxide,Liquid-phase epitaxy,wide bandgap

β-Ga₂O₃ is a crystal with ultra-wide bandgap that can be manufactured by melt methods. Liquid-phase epitaxy (LPE), one of the liquid phase growth methods, allows epitaxial growth of crystals on a substrate under nearly thermal equilibrium condition. This enables the rapid production of high-quality crystals. While the authors have already reported the LPE growth using β-Ga₂O₃ substrate, it is necessary to precisely dope foreign elements to β-Ga₂O₃ epitaxial film to obtain desired electrical properties towards application to power semiconductor materials. In this presentation, we will report the results of doping Sn, a donor dopant for β-Ga₂O₃, to LPE growth of β-Ga₂O₃ epitaxial film.