[20p-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[20p-A22-5] Investigation of activation annealing condition of β-Ga₂O₃ HVPE epitaxial wafer

〇Lin ChiaHung¹, Kengo Obayashi¹, Tomoka Nishikawa¹, Kentaro Ema¹, Yoshihiro Yamashita¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

Keywords:

Ga2O3,HVPE,activation annealing

The net donor concentration (N_d-N_a) in the underlying substrate will generally be deactivated after halide vapor phase epitaxy (HVPE) growth due to exposing the substrate to oxygen ambience. Therefore, a nitrogen activation annealing process after the HVPE growth is required for activating the N_d-N_a in the underlying substrate, which significantly affects the specific on-resistance (R_on) in vertical Schottky barrier diodes (SBDs). In this work, we investigated the thermal decomposition of the sample thickness, the activation rate of the underlying substrate, and the R_on of vertical SBD dependence on the nitrogen activation annealing temperature.