[20p-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[20p-A22-6] Growth rate control of β-Ga2O3 crystal growth in OVPE method using thermodynamic calculations

〇TOMOHIRO SHIRAISHI¹, IMANISHI MASAYUKI¹, HOSOKAWA KEISUKE¹, USAMI SHIGEYOSHI¹, MORI YUSUKE¹ (1.Osaka Univ.)

Keywords:

beta-Gallium(III) Oxide