[20p-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[20p-A22-7] X-ray topographic characterization of β-Ga₂O₃ crystals grown by vertical Bridgman method

〇Hirotaka Yamaguchi¹, Yukako Kato¹, Takuya Igarashi², Yuki Ueda², Kimiyoshi Koshi², Shinya Watanabe², Shigenobu Yamakoshi², Akito Kuramata² (1.AIST, 2.Novel Crystal Technology, Inc.)

Keywords:

wide-gap semiconductor,crystal growth,X-ray topography