[20p-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[20p-A22-8] Demonstration of vertical power devices of (001) β-Ga₂O₃ grown by MOCVD

〇Kentaro Ema¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

Keywords:

Ga2O3,MOCVD,power device

MOCVD method is widely used in the epitaxial growth process of compound semiconductors, and there are many reports on the (010) plane and (100) plane of β-Ga₂O₃. However, there are few reports on growth on the (001) plane, and the growth rate is low at less than 1 μm/h. In this study, we report SIMS analysis of epitaxial layers on (001) β-Ga₂O₃ substrates by MOCVD at a growth rate of 3.4 μm/h, and it was also confirmed that the impurity concentrations of H, C, and Si were at background levels and that high-purity epitaxial layers could be obtained on the (001) plane. Furthermore, we also fabricated SBDs on the epitaxial wafer and evaluated its electrical characteristics.