[20p-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[20p-A22-9] Study on NiO/β-Ga₂O₃ heterojunctions grown by MBE technique

〇Hirotaka Yamaguchi¹, Hitoshi Tampo¹, Takehiko Nagai¹, Yoshiaki Nakata², Kohei Sasaki² (1.AIST, 2.Novel Crystal Technology, Inc.)

Keywords:

wide-gap semiconductor