[20p-A31-1~14] 17.3 Layered materials

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[20p-A31-11] TMDC crystallinity on substrate temperature in in-situ-ALD-Al₂O₃ cover formation

〇Taiga Fuse¹, Naoki Matsunaga¹, Shungo Okamura¹, Keita Kurohara¹, Soma Ito¹, Shunsuke Nozawa¹, Takanori Shirokura¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech.)

Keywords:

Transition metal dichalcogenide,Atomic layer deposition,Sputtering

Transition metal dichalcogenides (TMDCs) are expected to be the next-generation semiconductors because of their high mobility even in thin films. On the other hand, it has been reported that atomic layer deposition (ALD) used to form Al₂O₃ insulating films oxidizes TMDCs with an H₂O precursor. Therefore, we investigated the substrate temperature dependence of TMDC film quality for Al₂O₃ cover deposition by in-situ-ALD.