The 85th JSAP Autumn Meeting 2024
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Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[20p-A31-1~14]17.3 Layered materials

Fri. Sep 20, 2024 1:15 PM - 5:00 PM JST
Fri. Sep 20, 2024 4:15 AM - 8:00 AM UTC
A31 (TOKI MESSE 3F)
Mahito Yamamoto(Kansai University)
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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[20p-A31-1]Fabrication of suspended 2D materials using plasticized polyvinyl chloride

〇Momoko Onodera1, Manabu Ataka1, Yijin Zhang1, Rai Moriya1, Kenji Watanabe2, Takashi Taniguchi2, Hiroshi Toshiyoshi1, Tomoki Machida1 (1.IIS, Univ. of Tokyo, 2.NIMS)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[20p-A31-2]Assessing point defects in CVD-grown monolayer WSe2 using conductive AFM

〇(M1)Yuta Sawai1, Takahiko Endo1, Yasumitsu Miyata1 (1.Tokyo Metro. Univ.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[20p-A31-3]Photoluminescence properties of monolayer MoSe2 grown on mica substrate

〇Takahiko Endo1, Wenjin Zhang1, Kenji Watanabe2, Takashi Taniguchi2, Yasumitsu Miyata1 (1.Tokyo Metro. Univ., 2.NIMS)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[20p-A31-4]Photoluminescence properties of Janus WSSe/WSe2 heterobilayers on hBN substrate

〇Tomoya Ogawa1, Wenjin Zhang1, Hiroshi Nakajo2,3,4, Soma Aoki2,3, Yuto Urano5, Takahiko Endo1, Yusuke Nakanishi1, Kenji Watanabe5, Takashi Taniguchi5, Toshiaki Kato2,3, Ryo Kitaura5, Yasumitsu Miyata1 (1.Tokyo Metro. Univ., 2.Tohoku Univ., 3.AIMR Tohoku Univ., 4.KOKUSAI ELECTRIC CORP., 5.NIMS)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[20p-A31-5]Carrier Modulation of Monolayer MoS2 by Remote Ferroelectric Doping and the Screening Effect Induced by h-BN Spacer Layers

〇KAIPENG RONG1, Ryosuke Noro2, Hayato Nishigaki2, Mingda Ding2, Yao Yao2, Taiki Inoue2, Ryuji Katayama2, Yoshihiro Kobayashi2, Kazunari Matsuda3, Shinichiro Mouri1 (1.Ritsumeikan Univ., 2.Osaka Univ., 3.Kyoto Univ.)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[20p-A31-6]PVD-MoS2 film with SVA through in-situ-ALD-Al2O3 film

〇Shunsuke Nozawa1, Shungo Okamura1, Naoki Matsunaga1, Keita Kurohara1, Hitoshi Wakabayashi1 (1.Tokyo Tech)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[20p-A31-7]Evaluation of F6-TCNNQ monolayer deposition on WSe2

〇Kensho Matsuda1, Takuya Kojima1, Yuto Noguchi1, Mengnan Ke1, Shohei Kumagai2, Toshihiro Okamoto2, Nobuyuki Aoki1 (1.Chiba Univ., 2.Tokyo Tech Univ.)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[20p-A31-8]The analytical method for evaluation of interface state density of 2D semiconductor channel materials

〇(M1)Masaru Sato1, Ryu Hasunuma1 (1.Univ. of Tsukuba)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[20p-A31-9]Thickness control of layered germanium arsenide film via thermal oxidation

〇Ayuta Hasumi1,2, Noriyuki Urakami1,2, Yoshio Hashimoto1,2 (1.Shinshu Univ., 2.Shinshu Univ. RISM)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[20p-A31-10]NbS2 as a TMDC metal with a high effective work function

〇Koki Hori1,2, Wen-Hsin Chang1, Toshifumi Irisawa1, Atsushi Ogura2,3, Naoya Okada1 (1.AIST, 2.Meiji Univ., 3.MREL)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[20p-A31-11]TMDC crystallinity on substrate temperature in in-situ-ALD-Al2O3 cover formation

〇Taiga Fuse1, Naoki Matsunaga1, Shungo Okamura1, Keita Kurohara1, Soma Ito1, Shunsuke Nozawa1, Takanori Shirokura1, Hitoshi Wakabayashi1 (1.Tokyo Tech.)
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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[20p-A31-12]Energetics and electronic structures of corrugated in-plane heterostructures of Janus WSSe

〇Mina Maruyama1, Susumu Okada1, Yanlin Gao1 (1.Univ. Tsukuba)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[20p-A31-13]Dependence of contact electrode shape on Ti/h-BN/CVD-monolayer MoS2 interface

〇Daiki Tsuruoka1, Takahiko Endo2, Yasumitsu Miyata2, Nobuyuki Aoki1, Mengnang Ke1 (1.Chiba univ., 2.Tokyo Metropolitan Univ.)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[20p-A31-14]Synthesis and performance evaluation of WTe2 nanowires for thermoelectric applications

〇(M1C)Wataru Ise1, Seiya Yokokura1,2, Hiroki Waizumi1,2, Toshihiro Shimada1,2 (1.CSE. Hokkaido Univ., 2.Eng. Hokkaido Univ.)
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