[20p-A31-1~14] 17.3 Layered materials

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[20p-A31-6] PVD-MoS₂ film with SVA through in-situ-ALD-Al₂O₃ film

〇Shunsuke Nozawa¹, Shungo Okamura¹, Naoki Matsunaga¹, Keita Kurohara¹, Hitoshi Wakabayashi¹ (1.Tokyo Tech)

Keywords:

transition metal dichalcogenide,sputtering,MoS2

MoS₂ film is attracting attention as a new channel material for next-generation FETs because the mobility of silicon decreases as transistor miniaturization progresses. However, if Al₂O₃ is deposited by ex-situ process after MoS₂ film deposition, there is a concern that the surface of MoS₂ film is oxidized and the film quality is degraded. In this study, we investigated the effectiveness of in-situ deposition by comparing the crystallinity of a MoS₂ film deposited by sputtering followed by in-situ deposition of an Al₂O₃ film by ALD and a MoS2 film deposited in the same way by ex-situprocess.