[20p-A31-1~14] 17.3 Layered materials

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[20p-A31-8] The analytical method for evaluation of interface state density of 2D semiconductor channel materials

〇(M1)Masaru Sato¹, Ryu Hasunuma¹ (1.Univ. of Tsukuba)

Keywords:

2D channel,interface state

We will propose an analytical method for quantitative evaluation of interface state density of 2D semiconductor channel materials. In this method we use a 2D-channel FET with a grounded source electrode and a floating drain electrode. By applying a pulse voltage to a backage, charging and discharging phenomena of the gate capacitor occurs. The difference in the time constants of the charging and discharging would be due to the carrier emission process from the interface states. It is expected that the energy distribution of the interface state can be investigated by analyzing the time constants.