[20p-B3-1~15] 6.3 Oxide electronics

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-B3-1] Differences Between Front and Rear Irradiation in Photoresponse Properties of Electrode/Nb:SrTiO₃ Junctions

〇Shin Sata¹, Yumeng Zheng¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci)

Keywords:

photoresponse,ReRAM,relaxation

ITO/0.1 wt% Nb-doped STO junctions with low Nb concentration were fabricated, and the equivalence of front and rear irradiation was verified by comparing the photoresponse properties of front and rear irradiation. The results showed that the time dependence of the normalized current in the photoinduced current relaxation process was consistent, suggested that the same mechanism governs the photoinduced current relaxation process for both front and rear irradiation. This indicates that rear irradiation measurement, in which free selection of electrodes is allowed, can be introduced for future mechanism elucidation.