Session Details

[20p-B3-1~15]6.3 Oxide electronics

Fri. Sep 20, 2024 1:00 PM - 5:00 PM JST
Fri. Sep 20, 2024 4:00 AM - 8:00 AM UTC
B3 (Exhibition Hall B)
Yasuhisa Naitoh(AIST), OHNO Takeo(Oita Univ.)

[20p-B3-1]Differences Between Front and Rear Irradiation in Photoresponse Properties of Electrode/Nb:SrTiO3 Junctions

〇Shin Sata1, Yumeng Zheng1, Kentaro Kinoshita1 (1.Tokyo Univ. of Sci)
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[20p-B3-2]Clarification of voltage-current characteristics and interface states of
metal/Nb:SrTiO3 junctions by ICTS method

〇Yumeng Zheng1, Kentaro Kinoshita1 (1.Tokyo Univ. of Sci.)
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[20p-B3-3]Evaluation of interface states of Pt/Nb:SrTiO3 junction to control the current relaxation process

〇Taiga Seto1, Ryosuke Ohtani1, Shin Sata1, Yumeng Zheng1, Kentaro Kinoshita1 (1.Tokyo Univ. of sci)
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[20p-B3-4]Electrical Characterization of Mott Transition at Room and High Temperatures in Mist-CVD Deposited NiO Thin Films for CeRAM Applications

〇Mamoru Ikeda1, Masamishi Azuma1, Tsubasa Miyamoto1, Hiroyuki Nishinaka1 (1.Kyoto Inst. Tech.)
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[20p-B3-5]First principles calculations of oxygen vacancy behavior and shear plane structures under electric field in rutile TiO2

〇(M2)Yuki Koizumi1, Zhuo Diao1, Tetsuya Tohei1, Akira Sakai1 (1.Osaka Univ.)
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[20p-B3-6]Distribution of oxygen vacancies and charge state of Pt for Pt/TiO2 model catalysts

〇Ryugen Suzuki1, Hajime Hojo1, Hisahiro Einaga1 (1.Kyushu Univ.)
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[20p-B3-7]Epitaxial growth of VO2 thin films on Al2O3 substrates by mist chemical vapor deposition

〇Aro Morinaga1, Takumi Ikenoue1, Masao Miyake1 (1.Kyoto Univ.)
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[20p-B3-8]Growth and characterization of N-doped VO2 thin films on a quartz substrate for the smart windows by the mist chemical vapor deposition.

〇(M2)Taisei Kano1, Hiroyuki Nishinaka1 (1.Kyoto Inst. of Tech.)
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[20p-B3-9]Detection of Kidney disorder based on pulsed laser deposited WO3 nanowire gas sensor

〇(M2)Keying Huang1, Sankar Ganesh Ramaraj1, Chuanlai Zang1, Hiroyasu Yamahara1, Hitoshi Tabata1 (1.Tokyo Univ.)
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[20p-B3-10]Doping effects on ZnO layer in transparent ReRAM with multi-component n-type oxide semiconductor thin films

〇Kyosuke Kimura1, Gakuto Terasawa1, Soma Yoshida1, Toshihiro Miyata1 (1.KIT)
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[20p-B3-11]Local current induced resistive switching in micro-constriction VO2 on hBN single crystal.

〇(M2)Yuki Tomita1, Shu Nakaharai2, Yutaka Wakayama3, Kenji Watanabe3, Takashi Taniguchi3, Haobo Li1, Azusa Hattori1, Hidekazu Tanaka1 (1.SANKEN. Osaka Univ., 2.Tokyo Univ. of Tech., 3.NIMS)
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[20p-B3-12]Mott transition switching of carbon-doped HfOx thin films by mist CVD for CeRAM applications

〇Masamichi Azuma1,2, Mamoru Ikeda1, Tsubasa Miyamoto1, Hiroyuki Nishinaka1 (1.Kyoto Inst. of Tech., 2.Symetrix Corp.)
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[20p-B3-13]Nanogap IGZO hydrogen gas sensor

〇Taku Yazawa1, Keisuke Ide1,2, Seiichiro Izawa1, Toshio Kamiya1,2, Yutaka Majima1 (1.Tokyo tech., 2.MDX Tokyo tech.)
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[20p-B3-14]Evaluation of CuO Nanowire Sensors with p-n Junctions Prepared by Atomic Migration

〇Yoshinari Kimura1, Hironori Tohmyoh1 (1.Tohoku Univ.)
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[20p-B3-15]Van der Waals Interactions Between Non-polar Alkyl Chains and Polar Oxide Surfaces Prevent Catalyst Deactivation in Aldehyde Gas Sensing

Kentaro Nakamura1, Tsunaki Takahashi1, Takuro Hosomi1, Wataru Tanaka1, 〇Takeshi Yanagida1 (1.Tokyo Univ.)
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