[20p-B3-1~15] 6.3 Oxide electronics | The 85th JSAP Autumn Meeting 2024

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Session Details

Oral presentation6 Thin Films and Surfaces : 6.3 Oxide electronics

[20p-B3-1~15]6.3 Oxide electronics

Fri. Sep 20, 2024 1:00 PM - 5:00 PM JST
Fri. Sep 20, 2024 4:00 AM - 8:00 AM UTC

B3 (Exhibition Hall B)

Yasuhisa Naitoh(AIST), OHNO Takeo(Oita Univ.)

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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-B3-1]Differences Between Front and Rear Irradiation in Photoresponse Properties of Electrode/Nb:SrTiO₃ Junctions

〇Shin Sata¹, Yumeng Zheng¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci)

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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[20p-B3-2]Clarification of voltage-current characteristics and interface states of
metal/Nb:SrTiO₃ junctions by ICTS method

〇Yumeng Zheng¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-B3-3]Evaluation of interface states of Pt/Nb:SrTiO₃ junction to control the current relaxation process

〇Taiga Seto¹, Ryosuke Ohtani¹, Shin Sata¹, Yumeng Zheng¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of sci)

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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-B3-4]Electrical Characterization of Mott Transition at Room and High Temperatures in Mist-CVD Deposited NiO Thin Films for CeRAM Applications

〇Mamoru Ikeda¹, Masamishi Azuma¹, Tsubasa Miyamoto¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst. Tech.)

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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-B3-5]First principles calculations of oxygen vacancy behavior and shear plane structures under electric field in rutile TiO₂

〇(M2)Yuki Koizumi¹, Zhuo Diao¹, Tetsuya Tohei¹, Akira Sakai¹ (1.Osaka Univ.)

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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-B3-6]Distribution of oxygen vacancies and charge state of Pt for Pt/TiO₂ model catalysts

〇Ryugen Suzuki¹, Hajime Hojo¹, Hisahiro Einaga¹ (1.Kyushu Univ.)

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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-B3-7]Epitaxial growth of VO₂ thin films on Al₂O₃ substrates by mist chemical vapor deposition

〇Aro Morinaga¹, Takumi Ikenoue¹, Masao Miyake¹ (1.Kyoto Univ.)

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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-B3-8]Growth and characterization of N-doped VO₂thin films on a quartz substrate for the smart windows by the mist chemical vapor deposition.

〇(M2)Taisei Kano¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech.)

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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[20p-B3-9]Detection of Kidney disorder based on pulsed laser deposited WO₃ nanowire gas sensor

〇(M2)Keying Huang¹, Sankar Ganesh Ramaraj¹, Chuanlai Zang¹, Hiroyasu Yamahara¹, Hitoshi Tabata¹ (1.Tokyo Univ.)

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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[20p-B3-10]Doping effects on ZnO layer in transparent ReRAM with multi-component n-type oxide semiconductor thin films

〇Kyosuke Kimura¹, Gakuto Terasawa¹, Soma Yoshida¹, Toshihiro Miyata¹ (1.KIT)

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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[20p-B3-11]Local current induced resistive switching in micro-constriction VO2 on hBN single crystal.

〇(M2)Yuki Tomita¹, Shu Nakaharai², Yutaka Wakayama³, Kenji Watanabe³, Takashi Taniguchi³, Haobo Li¹, Azusa Hattori¹, Hidekazu Tanaka¹ (1.SANKEN. Osaka Univ., 2.Tokyo Univ. of Tech., 3.NIMS)

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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[20p-B3-12]Mott transition switching of carbon-doped HfOx thin films by mist CVD for CeRAM applications

〇Masamichi Azuma^1,2, Mamoru Ikeda¹, Tsubasa Miyamoto¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech., 2.Symetrix Corp.)

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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[20p-B3-13]Nanogap IGZO hydrogen gas sensor

〇Taku Yazawa¹, Keisuke Ide^1,2, Seiichiro Izawa¹, Toshio Kamiya^1,2, Yutaka Majima¹ (1.Tokyo tech., 2.MDX Tokyo tech.)

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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[20p-B3-14]Evaluation of CuO Nanowire Sensors with p-n Junctions Prepared by Atomic Migration

〇Yoshinari Kimura¹, Hironori Tohmyoh¹ (1.Tohoku Univ.)

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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[20p-B3-15]Van der Waals Interactions Between Non-polar Alkyl Chains and Polar Oxide Surfaces Prevent Catalyst Deactivation in Aldehyde Gas Sensing

Kentaro Nakamura¹, Tsunaki Takahashi¹, Takuro Hosomi¹, Wataru Tanaka¹, 〇Takeshi Yanagida¹ (1.Tokyo Univ.)

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Session Details

[20p-B3-1~15]6.3 Oxide electronics

[20p-B3-1]Differences Between Front and Rear Irradiation in Photoresponse Properties of Electrode/Nb:SrTiO3 Junctions

[20p-B3-2]Clarification of voltage-current characteristics and interface states of metal/Nb:SrTiO3 junctions by ICTS method

[20p-B3-3]Evaluation of interface states of Pt/Nb:SrTiO3 junction to control the current relaxation process

[20p-B3-4]Electrical Characterization of Mott Transition at Room and High Temperatures in Mist-CVD Deposited NiO Thin Films for CeRAM Applications

[20p-B3-5]First principles calculations of oxygen vacancy behavior and shear plane structures under electric field in rutile TiO2

[20p-B3-6]Distribution of oxygen vacancies and charge state of Pt for Pt/TiO2 model catalysts

[20p-B3-7]Epitaxial growth of VO2 thin films on Al2O3 substrates by mist chemical vapor deposition

[20p-B3-8]Growth and characterization of N-doped VO2 thin films on a quartz substrate for the smart windows by the mist chemical vapor deposition.

[20p-B3-9]Detection of Kidney disorder based on pulsed laser deposited WO3 nanowire gas sensor

[20p-B3-10]Doping effects on ZnO layer in transparent ReRAM with multi-component n-type oxide semiconductor thin films

[20p-B3-11]Local current induced resistive switching in micro-constriction VO2 on hBN single crystal.

[20p-B3-12]Mott transition switching of carbon-doped HfOx thin films by mist CVD for CeRAM applications

[20p-B3-13]Nanogap IGZO hydrogen gas sensor

[20p-B3-14]Evaluation of CuO Nanowire Sensors with p-n Junctions Prepared by Atomic Migration

[20p-B3-15]Van der Waals Interactions Between Non-polar Alkyl Chains and Polar Oxide Surfaces Prevent Catalyst Deactivation in Aldehyde Gas Sensing

[20p-B3-1]Differences Between Front and Rear Irradiation in Photoresponse Properties of Electrode/Nb:SrTiO₃ Junctions

[20p-B3-2]Clarification of voltage-current characteristics and interface states of
metal/Nb:SrTiO₃ junctions by ICTS method

[20p-B3-3]Evaluation of interface states of Pt/Nb:SrTiO₃ junction to control the current relaxation process

[20p-B3-5]First principles calculations of oxygen vacancy behavior and shear plane structures under electric field in rutile TiO₂

[20p-B3-6]Distribution of oxygen vacancies and charge state of Pt for Pt/TiO₂ model catalysts

[20p-B3-7]Epitaxial growth of VO₂ thin films on Al₂O₃ substrates by mist chemical vapor deposition

[20p-B3-8]Growth and characterization of N-doped VO₂thin films on a quartz substrate for the smart windows by the mist chemical vapor deposition.

[20p-B3-9]Detection of Kidney disorder based on pulsed laser deposited WO₃ nanowire gas sensor