[20p-B3-1~15] 6.3 Oxide electronics

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[20p-B3-12] Mott transition switching of carbon-doped HfOx thin films by mist CVD for CeRAM applications

〇Masamichi Azuma^1,2, Mamoru Ikeda¹, Tsubasa Miyamoto¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech., 2.Symetrix Corp.)

Keywords:

Mott trnsition,CeRAM,Hafunium Oxide thin film

Doping a transition metal oxide thin film with carbon changes the band structure and greatly reduces the band gap. This allows the non-polarity switching phenomenon of metal-insulator electrically via the Mott transition. Strongly correlated electron random access memory (CeRAM) has been proposed as a resistive memory that utilizes this phenomenon. In this paper, we report on the fabrication of a carbon-doped HfOx thin film using the mist CVD method, which allows film deposition under atmospheric pressure, and the confirmation of the operation of a CeRAM element.