[20p-B3-1~15] 6.3 Oxide electronics

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-B3-3] Evaluation of interface states of Pt/Nb:SrTiO₃ junction to control the current relaxation process

〇Taiga Seto¹, Ryosuke Ohtani¹, Shin Sata¹, Yumeng Zheng¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of sci)

Keywords:

Resistive Random-Access Memory,current relaxation phenomena,ICTS method

Metal/NSTO is expected to be applied as a device capable of learning by electrical stimulation. Since the relaxation time of the current relaxation process determines the time scale of the signal to be learned, it is urgent to investigate how to control the relaxation time. In this study, changes in the interface state due to interface treatment were evaluated using the ICTS method, and the relationship with the current relaxation characteristics was investigated. It is suggested that the relaxation properties can be controlled by increasing or decreasing the amount of oxygen defects due to the interface treatment, and the ICTS method was found to have an effect on the interface state.