[20p-B3-1~15] 6.3 Oxide electronics

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-B3-8] Growth and characterization of N-doped VO₂ thin films on a quartz substrate for the smart windows by the mist chemical vapor deposition.

〇(M2)Taisei Kano¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech.)

Keywords:

smart window,metal-insulator transition,mist CVD

Since Morin reported that vanadium dioxide (VO₂) exhibits a metal-insulator transition (MIT) at about 67°C, considerable research has been conducted. In recent years, smart windows that take advantage of the change in infrared transmittance associated with MIT have attracted much attention. However, the transition temperature, higher than the ambient temperature, is an issue for practical application. In this study, we aimed to change the transition temperature to near ambient temperature by N-doping VO₂.