[20p-C42-1~6] 15.4 III-V-group nitride crystals

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-C42-4] The fabrication of AlGaN quantum well structure grown on bulk AlN substrate fabricated by solid phase epitaxy

〇Yoshinori Imoto¹, Rintaro Miyake¹, Ryoya Yamada¹, Takumu Saito¹, Shundai Maruyama¹, Yusuke Sasaki¹, Shogo Karino¹, Sho Iwayama¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Yosuke Sato², Kyohei Atsuji², Kentaro Nonaka² (1.Meijo Univ., 2.NGK INSULATORS, LTD)

Keywords:

Bulk AlN substrate,UV laser

the fabrication of bulk AlN substrate is reported recently. However, Any groups haven't reported the crystal quality and luminescence characteristics yet. In this report, we fabricated and evaluated AlGaN quantum wells on bulk AlN substrate. And also, we will report results that we processed that bulk AlN substrate to AlN nanopillars and fabricated the UV-B laser on that template.