The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[20p-C42-1~6]15.4 III-V-group nitride crystals

Fri. Sep 20, 2024 1:30 PM - 3:00 PM JST
Fri. Sep 20, 2024 4:30 AM - 6:00 AM UTC
C42 (Hotel Nikko 4F)
Maki Kushimoto(Nagoya Univ.)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[20p-C42-1]AlN template on sapphire substrate (1) -Growth mode dependence-

〇Koji Okuno1,2, Hibiki Muto2, Sena Miura2, Masaki Ohya1, Yoshiki Saito1,2, Hisanori Ishiguro2, Satoshi Kamiyama2, Motoaki Iwaya2, Tetsuya Takeuchi2 (1.Toyoda Gosei, 2.Meijo Univ.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[20p-C42-2]AlN template on sapphire substrate (2) -Effect of AlGaN nucleation layer-

〇Koji Okuno1,2, Hibiki Muto2, Sena Miura2, Masaki Ohya1, Yoshiki Saito1,2, Hisanori Ishiguro2, Satoshi Kamiyama2, Motoaki Iwaya2, Tetsuya Takeuchi2 (1.Toyoda Gosei, 2.Meijo Univ.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-C42-3]AlN template on sapphire substrate (3) -Substrate exfoliation-

〇(M1)Sena Miura1, Maho Fujita1, Naoki Hamashima1, Ryunosuke Oka1, Teppei Takehisa1, Hibiki Muto1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1, Hisanori Isiguro1, Koji Okuno1,2, Yoshiki Saito1,2 (1.Meijo Univ., 2.Toyoda Gosei)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-C42-4]The fabrication of AlGaN quantum well structure grown on bulk AlN substrate fabricated by solid phase epitaxy

〇Yoshinori Imoto1, Rintaro Miyake1, Ryoya Yamada1, Takumu Saito1, Shundai Maruyama1, Yusuke Sasaki1, Shogo Karino1, Sho Iwayama1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1, Yosuke Sato2, Kyohei Atsuji2, Kentaro Nonaka2 (1.Meijo Univ., 2.NGK INSULATORS, LTD)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-C42-5]Influences of Mg doping on hole concentration in polarization-doped AlGaN graded layer on AlN

〇Teppei Takehisa1, Hayata Takahata1, Ryunosuke Oka1, Hibiki Muto1, Naoki Hamashima1, Sena Miura1, Hisanori Idhiguro1, Motonari Iwaya1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Yoshiki Saito2, Koji Okuno2 (1.Meijo Univ., 2.TOYODA GOSEI Co.)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[20p-C42-6]Effects of the vicinal m-Al2O3 (10-10) substrates on the semipolar AlN (10-13) growth

〇Xu-Qiang Shen1, Kazutoshi Kojima1 (1.AIST)
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