[20p-C42-1~6] 15.4 III-V-group nitride crystals

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[20p-C42-6] Effects of the vicinal m-Al₂O₃ (10-10) substrates on the semipolar AlN (10-13) growth

〇Xu-Qiang Shen¹, Kazutoshi Kojima¹ (1.AIST)

Keywords:

AlN

We developed a new growth technique, named ammonia-free high-temperature MOCVD. Using this growth technique, we succeeded in growing high-quality semipolar (10-13) AlN epilayer. In this study, we report the effect of vicinal m-face sapphire substrates on the growth of the semipolar (10-13) AlN epilayer.