[20p-C43-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[20p-C43-2] Selective Etching of Semiconductor Surfaces with the Catalytic Effect of Nanocarbons
-Hole injection at catalyst/semiconductor interfaces in contact with an etchant and attempts to control hole diffusion-

〇Seiya Yamamoto¹, Junhuan Li¹, Kouji Inagaki¹, Kenta Arima¹ (1.Osaka Univ.)

Keywords:

graphene catalyst,etching,redox reaction

We have discovered non-metallic catalyst-assisted chemical etching, in which the Ge surface in contact with nanocarbons is selectively etched in O₂-containing water. In this report, we added H₂O₂ to the etchant and compared its etching characteristics with those of O₂-dissolved water. Based on this, we are considering to control the etching profile by applying a bias voltage to the backside of the semiconductor substrate. We show some recent results of etching experiments under applied bias using semiconductor samples with metal or another catalyst.