The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation13 Semiconductors : 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[20p-C43-1~11]13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 20, 2024 1:00 PM - 4:00 PM JST
Fri. Sep 20, 2024 4:00 AM - 7:00 AM UTC
C43 (Hotel Nikko 4F)
Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)
PR
Rohm
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-C43-1]Vapor Phase Si Etching Assisted by Graphene Oxide (GO) with Photochemically Modified In-plane Structure

〇YUTA GOTO1, Toru Utsunomiya1, Takashi Ichii1 (1.Kyoto univ.)
Comment()
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[20p-C43-2]Selective Etching of Semiconductor Surfaces with the Catalytic Effect of Nanocarbons
-Hole injection at catalyst/semiconductor interfaces in contact with an etchant and attempts to control hole diffusion-

〇Seiya Yamamoto1, Junhuan Li1, Kouji Inagaki1, Kenta Arima1 (1.Osaka Univ.)
Comment()
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[20p-C43-3]The influence of Ar/N2 gas flow ratio on the electrical characteristics of ferroelectric hafnium nitride formed by ECR-plasma sputtering

〇KANGBAI LI1, Shun-ichiro Ohmi1 (1.Tokyo Tech.)
Comment()
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[20p-C43-4]Evaluation of Defect Distribution at SiO2/Si Interface Generated by Electron Beam Irradiation

〇Ryo Shimizu1, Yasunari Sohda1, Ryu Hasunuma1 (1.Univ. of Tsukuba)
Comment()
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-C43-5]Defect state analysis of a-Al2O3/GaN interface using machine learning potential MD

〇Koki Sato1, Mutsunori Uenuma2, Ryousuke Jinnouchi1, Ryoji Asahi1 (1.Nagoya Univ., 2.AIST)
Comment()
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[20p-C43-6]Preparation of colloidal Si quantum dots embedded ion crystal powder

〇Ryosuke Oshima1 (1.Hosei Univ)
Comment()
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[20p-C43-7]Transport Properties for P-doped strained SiGe/Ge grown on Patterned Si(111) Substrates

〇Soichiro Takei1, Syu Kikuoka1, Jun Okutani1, Syugo Ishibashi1, Michihiro Yamada1, Kohei Hamaya2,3, Kentarou Sawano1 (1.Tokyo City Univ., 2.CSRN Osaka Univ., 3.OTRI Osaka Univ.)
Comment()
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)English Presentation

[20p-C43-8]Synthetic Image Generation of Microstructure Surfaces Using Physically Based Rendering Techniques

Zhen-Wei Tsai1, 〇(M1)Chao-Ching Ho1 (1.Nat'l Taipei Uni. of Tech.)
Comment()
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[20p-C43-9]Statistic prediction of threshold voltage variations of MOSFET
caused by discrete impurities by machine learning

〇Shota Seki1,2, Keiichi Osada1, Masaki Takaishi1, Ryotaro Kasahara1,2, Kentaro Kutsukake2,3, Toru Ujihara1,2,3 (1.Aixtal, 2.Nagoya Univ., 3.IMaSS Nagoya Univ.)
Comment()
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[20p-C43-10]Field-induced Current Switching in a Nanoribbon with Random Comb-like Structure

〇Hajime Tanaka1, Nobuya Mori1 (1.Osaka Univ.)
Comment()
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-C43-11]Monte Carlo Simulation of Crystallographic Orientation Dependence of Electron Mobility in Semiconctor Nanosheets

〇Jo Okada1, Hajime Tanaka1, Nobuya Mori1 (1.Osaka University)
Comment()
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