[20p-C43-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials | The 85th JSAP Autumn Meeting 2024

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Oral presentation13 Semiconductors : 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[20p-C43-1~11]13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Sep 20, 2024 1:00 PM - 4:00 PM JST
Fri. Sep 20, 2024 4:00 AM - 7:00 AM UTC

C43 (Hotel Nikko 4F)

Nobuya Mori(Osaka Univ.), Takashi Hasunuma(Univ. of Tsukuba)

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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-C43-1]Vapor Phase Si Etching Assisted by Graphene Oxide (GO) with Photochemically Modified In-plane Structure

〇YUTA GOTO¹, Toru Utsunomiya¹, Takashi Ichii¹ (1.Kyoto univ.)

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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[20p-C43-2]Selective Etching of Semiconductor Surfaces with the Catalytic Effect of Nanocarbons
-Hole injection at catalyst/semiconductor interfaces in contact with an etchant and attempts to control hole diffusion-

〇Seiya Yamamoto¹, Junhuan Li¹, Kouji Inagaki¹, Kenta Arima¹ (1.Osaka Univ.)

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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[20p-C43-3]The influence of Ar/N₂ gas flow ratio on the electrical characteristics of ferroelectric hafnium nitride formed by ECR-plasma sputtering

〇KANGBAI LI¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[20p-C43-4]Evaluation of Defect Distribution at SiO₂/Si Interface Generated by Electron Beam Irradiation

〇Ryo Shimizu¹, Yasunari Sohda¹, Ryu Hasunuma¹ (1.Univ. of Tsukuba)

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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-C43-5]Defect state analysis of a-Al₂O₃/GaN interface using machine learning potential MD

〇Koki Sato¹, Mutsunori Uenuma², Ryousuke Jinnouchi¹, Ryoji Asahi¹ (1.Nagoya Univ., 2.AIST)

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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[20p-C43-6]Preparation of colloidal Si quantum dots embedded ion crystal powder

〇Ryosuke Oshima¹ (1.Hosei Univ)

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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[20p-C43-7]Transport Properties for P-doped strained SiGe/Ge grown on Patterned Si(111) Substrates

〇Soichiro Takei¹, Syu Kikuoka¹, Jun Okutani¹, Syugo Ishibashi¹, Michihiro Yamada¹, Kohei Hamaya^2,3, Kentarou Sawano¹ (1.Tokyo City Univ., 2.CSRN Osaka Univ., 3.OTRI Osaka Univ.)

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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)English Presentation

[20p-C43-8]Synthetic Image Generation of Microstructure Surfaces Using Physically Based Rendering Techniques

Zhen-Wei Tsai¹, 〇(M1)Chao-Ching Ho¹ (1.Nat'l Taipei Uni. of Tech.)

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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[20p-C43-9]Statistic prediction of threshold voltage variations of MOSFET
caused by discrete impurities by machine learning

〇Shota Seki^1,2, Keiichi Osada¹, Masaki Takaishi¹, Ryotaro Kasahara^1,2, Kentaro Kutsukake^2,3, Toru Ujihara^1,2,3 (1.Aixtal, 2.Nagoya Univ., 3.IMaSS Nagoya Univ.)

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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[20p-C43-10]Field-induced Current Switching in a Nanoribbon with Random Comb-like Structure

〇Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka Univ.)

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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20p-C43-11]Monte Carlo Simulation of Crystallographic Orientation Dependence of Electron Mobility in Semiconctor Nanosheets

〇Jo Okada¹, Hajime Tanaka¹, Nobuya Mori¹ (1.Osaka University)

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