[20p-C43-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[20p-C43-4] Evaluation of Defect Distribution at SiO₂/Si Interface Generated by Electron Beam Irradiation

〇Ryo Shimizu¹, Yasunari Sohda¹, Ryu Hasunuma¹ (1.Univ. of Tsukuba)

Keywords:

silicon,electron beam,semiconductor

Defect distribution at SiO₂/Si interface generated by electron beam irradiation was investigated by flattening the Si(111) surface in LOW (ultralow-dissolved-oxygen water). By AFM observation after LOW treatment of the Si(111) surface, it was found that the defects were localized in a region with a depth of about 3 nm from the Si surface. This result is probably due to the thermal-oxidation-induced stress accumulated near the SiO₂/Si interface.