[20p-C43-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[20p-C43-7] Transport Properties for P-doped strained SiGe/Ge grown on Patterned Si(111) Substrates

〇Soichiro Takei¹, Syu Kikuoka¹, Jun Okutani¹, Syugo Ishibashi¹, Michihiro Yamada¹, Kohei Hamaya^2,3, Kentarou Sawano¹ (1.Tokyo City Univ., 2.CSRN Osaka Univ., 3.OTRI Osaka Univ.)

Keywords:

mobility,SiGe