Session Details
[16p-P06-1~6]13.2 Exploratory Materials, Physical Properties, Devices
Mon. Sep 16, 2024 1:30 PM - 3:30 PM JST
Mon. Sep 16, 2024 4:30 AM - 6:30 AM UTC
Mon. Sep 16, 2024 4:30 AM - 6:30 AM UTC
P06 (Exhibition Hall A)
[16p-P06-1]Investigation of single crystallization mechanism of φ50mm size Mg2Si crystals
〇Zenji Fujihisa1, Yusei Kimura1, Kosuke Shimano1, Shunya Sakane1, Xin Liu2, Noritaka Usami2, Haruhiko Udono1 (1.Ibaraki Univ., 2.Nagoya Univ.)
[16p-P06-2]Effects of Sputtering and Annealing Conditions on Oxygen Content in Mg2Si Thin Films
〇Keisuke Asano1, Katsumata Hiroshi1 (1.Meiji Univ.)
[16p-P06-3]Effect of carrier density in n-Mg2Si substrate on the output characteristics of Mg2Si TPV cells fabricated by thermal diffusion
〇Takumi Shimizu1, Kosuke Shimano1, Sakane Shunya1, Udono Haruhiko1 (1.Ibaraki Univ.)
[16p-P06-4]Reduction of cracks in BaSi2 films on p-type Si(100) substrates
〇Takumi Ishikawa1, Katsushi Nishino1 (1.Tokushima Univ.)
[16p-P06-5]Growth of thicker BaSi2 films on n-type Si substrates by vacuum evaporation
〇Keiko Tsutsui1, Katsushi Nishino1 (1.Tokushima Univ.)
[16p-P06-6]Comparison of I-V characteristics of Low Threshold SBDs Using Japanese and Spanish FeS2 Natural Crystals
〇Riku Ando1, Gaku Kamio1, Ren Morita1, Hiroshi Fujioka2, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)