Presentation Information

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[22a-12A-5]Crystal Growth and Characterization of Type-Ⅱ Quantum Wells on InGaAs Buffer Layer on GaAs Substrate

〇Rikuto Takashima¹, Koki Hombu¹, Kazuki Usui¹, Koichiro Kunitake¹, Hidetoshi Suzuki¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

Keywords:

semiconductor,InGaAs

We conducted an initial investigation into the possibility of combining metamorphic InGaAs on GaAs and Sb-based Type-II materials to alleviate the limitation caused by lattice distortion and to increase the degree of freedom in design. As a result, we confirmed that the PL intensity of metamorphic InGaAs on GaAs substrate is larger and longer wavelength than that of InGaAs grown directly on GaAs substrate.

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