[22a-12A-1~11] 3.12 Semiconductor optical devices (formerly 3.13)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[22a-12A-6] Lasing characteristics of GaInAsP LD on directly bonded InP/Si substrates with gas out channel (Ⅱ)

〇Liang Zhao¹, Gandhi Kallarasan Periyanayagam¹, Junyu Zhang¹, Ryosuke Yada¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:

Hydrophilic Direct Bonding,Silicon photonics,InP