[22a-12G-1~9] 8.1 Plasma production and diagnostics

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[22a-12G-5] Spatiotemporal Distribution of the Intensity of Atmospheric-Pressure Surface-Launched Plasma Generated with High-dV/dt Pulse Voltage Driven by SiC MOS-FET

〇Tatsuru Shirafuji¹, Koji Kuroda¹, Atsumu Matsumoto¹, Genki Kawanishi¹, Shogo Kazumori¹, Jun-Seok Oh¹ (1.Osaka Metrop. Univ.)

Keywords:

plasma bullets,dV/dt,SiC

In the generation of atmospheric-pressure surface-launched plasma, dV/dt has been improved from 34 kV/μs to 67 kV/μs by changing the switching MOS FET of the pulse power supply from Si to SiC. We have confirmed the increase in the emission intensity and propagation speed of the atmospheric-pressure surface-launched plasma generated at the rise of the voltage by using the higher dV/dt pulse voltage. This means that the use of SiC MOS FETs is extremely effective for highly efficient generation of atmospheric-pressure surface-launched plasma.