Presentation Information

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22a-21C-6]Investigation of (0001) surface ITO etching with plasma emission monitoring in GaInN/GaN multiple-quantum-shell LEDs

〇Yuta Hattori¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Soma Inaba¹, Ayaka Shima¹, shiori Ii¹, Mizuki Takahashi¹, Yuki Yamanaka¹, Kosei Kubota¹ (1.Meijo Univ.)

Keywords:

nanowire

MQS-LEDs with multiple quantum shell (MQS) active layers grown on GaN nanowires (NWs) are composed of polar (0001), non-polar (10-10) and semi-polar (1-101) planes. Conventional MQS-LEDs have low luminescence efficiency when driven by low current domains because current injection starts from the (0001) surface, which has a large defect density. In this study, we investigated the effect of selective and precise etching of ITO on the top of the (0001) surface by using a plasma luminescence monitor to block the current to the (0001) surface.

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