[22p-12E-1~13] 2.1 Detection Devices

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[22p-12E-6] In/CdTe/Au p–n Gamma-ray Detectors Fabricated Using n-type Layer Formed by Laser-induced Backside Doping with Nd:YAG Laser

〇Taku Miyake¹, Nishizawa Junichi², Toru Aoki^1,2, Hidenori Mimura^1,2 (1.ANSeeN.INC, 2.Shizuoka Univ.)

Keywords:

CdTe semiconductor,gamma ray detector,flat panel detector

An n-type layer was formed in p-type CdTe via the laser-induced backside doping of In with a Nd:YAG laser. Hall effect measurements confirmed the formation of an n-type layer on the In- doped area. The In/CdTe/Au p–n diode was fabricated as a gamma-ray detector via laser-induced backside doping. A guard-ring structure was introduced into the In anode electrode to realize an electron-collecting-type detector with a low leakage current, although pixelation on the In anode side was difficult. In the In/CdTe/Au p–n gamma-ray detector, rectification behavior was clearly observed.