Presentation Information

[22p-21C-17]Room-temperature PL lifetimes in the state-of-the-art three-dimensional GaN (III)

〇Shigefusa Chichibu1, Kohei Shima1, Akira Uedono2, Shoji Ishibashi3, Ryo Tanaka4, Shin-ya Takashima4, Katsunori Ueno4, Masaharu Edo4, Hirotaka Watanabe5, Yoshio Honda5, Jun Suda5, Hiroshi Amano5, Tetsu Kachi5, Toshihide Nabatame6, Yoshihiro Irokawa6, Yasuo Koide6 (1.Tohoku Univ., 2.Univ. of Tsukuba, 3.AIST, 4.Fuji Electric, 5.Nagoya Univ., 6.NIMS)

Keywords:

Nitride semiconductor,GaN,luminescence lifetime

Major point defect species and room-temperature photoluminescence lifetimes in the state-of-the-art GaN are introduced.