[22p-21C-1~18] 15.4 III-V-group nitride crystals | The 71st JSAP Spring Meeting 2024

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[22p-21C-1~18]15.4 III-V-group nitride crystals

Fri. Mar 22, 2024 1:00 PM - 6:00 PM JST
Fri. Mar 22, 2024 4:00 AM - 9:00 AM UTC

21C (Building No. 2)

Atsushi Yamaguchi(Kanazawa Inst. of Tech.), Ryota Ishii(Kyoto Univ.), Daichi Imai(Meijo Univ.)

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[22p-21C-1]Impact of band-bending on carrier lifetime of InGaN at surface

〇Shuhei Ichikawa^1,2, Yoshinobu Matsuda³, Heishiroh Dojo¹, Mitsuru Funato³, Yoichi Kawakami³, Kazunobu Kojima¹ (1.Grad. Sch. of Eng., Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.Kyoto Univ.)

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[22p-21C-2]Atomic force microscopy and scanning near-field optical microscopy on single quantum-well InGaN blue LEDs

〇(D)Zhaozong Zhang¹, Ryota Ishii¹, Kanako Shojiki¹, Mitsuru Funato¹, Daisuke Iida², Kazuhiro Ohkawa², Yoichi Kawakami¹ (1.Kyoto Univ., 2.KAUST)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[22p-21C-3]Integrated analysis of the A₁(LO) and E₂(high) modes in GaInN/GaN heterostructures by Raman spectroscopy

〇(DC)KhaingShwe TheeEi¹, Tatsuya Asaji¹, Bei Ma¹, Daisuke Iida², Mohammed A. Najmi², Kazuhiro Ohkawa², Yoshihiro Ishitani¹ (1.Chiba Univ., 2.KAUST)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22p-21C-4]Carrier diffusion processes in InGaN quantum wells measured by time-resolved PL measurements

〇Osuke Ito¹, Keito Mori¹, Atsushi Yamaguchi¹, Maiko Ito², Rintaro Koda², Tatsushi Hamaguchi² (1.Kanazawa Inst. of Tech., 2.Sony Semiconductor Solutions Corp.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[22p-21C-5]Introduction of localized surface plasmon effect to PEDOT-LED

〇(B)Ryusei Sakamoto¹, Yuma Kato¹, Ryotaro Ito¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Emi Matsuyama², Atsushi Suzuki² (1.Meijo Univ., 2.E&E Evolution Ltd.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[22p-21C-6]Aperture dimeter dependences of highly efficient GaN VCSELs

〇Mitsuki Yanagawa¹, Ruka Watanabe¹, Kenta Kobayashi¹, Taichi Nishikawa¹, Tetsuya Takeuchi¹, Kamiyama Satoshi¹, Iwaya Motoaki¹ (1.Meijo Univ.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[22p-21C-7]Effect of Point Defects on Dielectric Functions of GaN

〇Takahiro Kawamura¹, Toru Akiyama¹ (1.Mie Univ.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[22p-21C-8]Effect of film thickness on GaN grown on ScAlMgO₄ substrate in electrical characterization measurement using THz Time-Domain spectroscopic Ellipsometry

〇Takashi Fujii^1,2, Watanabe Hayato¹, Tsuchida Kaito¹, Iwamoto Tohiyuki², Fukuda Tsuguo³, Deura Momoko¹, Araki Tsutomu¹ (1.Ritsumeikan Univ., 2.PNP, 3.Fkuda Cryst Lab.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[22p-21C-9]Investigation of electronic properties on n-type GaN/Ti/Au by Raman spectroscopy and dielectric dispersion analysis in high temperatures

〇Takuto Matsuda¹, Koudai Matsusita¹, Jun Suda¹ (1.Chukyo Univ)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[22p-21C-10]Investigation of thermal stress on n-type GaN/Ti/Au by Raman spectroscopy and FEM analysis at high temperature

〇Kodai Matsushita¹, Takuto Matsuda¹, Jun Suda¹ (1.Chukyo Univ.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[22p-21C-11]Observation of longitudinal optical-like phonon resonating radiation from Au-AlGaN surface micro-stripe structures

〇(B)Daiki Yoshikawa¹, Bojin Lin¹, Hnin Lai Lai Aye¹, Yoshihiro Isitani¹ (1.Chiba Univ.)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[22p-21C-12]Analysis of the in-gap optical absorption processes of GaN/Al_1-xIn_xN multilayer structure

〇Kouki Noda¹, Kenta Kobayashi¹, Daichi Imai¹, Tetsuya Takeuchi¹, Takao Miyajima¹ (1.Meijo Univ.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[22p-21C-13]Thermal conductivity characterization of GaN by using frequency dependent photothermal deflection signal

〇Mayu Nomura¹, Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ.)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[22p-21C-14]Competition between electronic and phononic process of 2-dimensional exciton in GaN/AlN quantum well analyzed by phononic-excitonic-radiative model

〇(D)Masaya Chizaki¹, Yoshihiro Ishitani¹ (1.Chiba Univ.)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[22p-21C-15]Midgap recombination processes in GaN crystals grown by the low pressure acidic ammonothermal method

〇Kohei Shima¹, Akira Uedono², Shoji Ishibashi³, Toru Ishiguro¹, Shigefusa Chichibu¹ (1.IMRAM Tohoku Univ., 2.Univ. of Tsukuba, 3.AIST)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[22p-21C-16]Room-temperature PL lifetimes in the state-of-the-art three-dimensional GaN (II)

〇Shigefusa Chichibu¹, Kohei Shima¹, Akira Uedono², Shoji Ishibashi³, Ryo Tanaka⁴, Shin-ya Takashima⁴, Katsunori Ueno⁴, Masaharu Edo⁴, Hirotaka Watanabe⁵, Yoshio Honda⁵, Jun Suda⁵, Hiroshi Amano⁵, Tetsu Kachi⁵, Toshihide Nabatame⁶, Yoshihiro Irokawa⁶, Yasuo Koide⁶ (1.Tohoku Univ., 2.Univ. of Tsukuba, 3.AIST, 4.Fuji Electric, 5.Nagoya Univ., 6.NIMS)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[22p-21C-17]Room-temperature PL lifetimes in the state-of-the-art three-dimensional GaN (III)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[22p-21C-18]Cathodoluminescence studies of hexagonal BN epilayers containing graphitic BN segments grown by chemical vapor deposition on a sapphire substrate using BCl₃ and NH₃ precursors

〇Kohei Shima¹, Takumi Kasuya¹, Shundai Takaya¹, Haruto Tsujitani¹, Kazuhiko Hara², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.RIE, Shizuoka Univ.)

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