[22p-32A-1~8] 17.1 Carbon nanotubes & other nanocarbon materials

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[22p-32A-8] Fundamental structures and properties of carbon nanotube nonvolatile memory resistors

〇Takahiro Morimoto¹, Kazufumi Kobashi¹, Naoya Sashida², Jun Ohno² (1.AIST, 2.FSM)

Keywords:

CNT,CRAM,ReRAM

Carbon nanotube nonvolatile memory (CRAM) is a memory device that utilizes resistance changes caused by the application of voltage, and has high potential as a next-generation memory device due to its nonvolatility, high-speed writability, high write endurance, and high information retention capability. On the other hand, there are still many unresolved issues, such as the basic principle of operation and the behavior of the CNT electrode interface. In this talk, we will report on the basic properties, evaluation, and bundle-level electrical properties of the collapsed and stacked structure of CNTs, which was found to be the basic structure in CNT layers.