[22p-61B-1~7] Piezoelectric Device Applications of Oxide Materials

3:00 PM - 3:30 PM JST(6:00 AM - 6:30 AM UTC)

[22p-61B-4] Piezoelectric single-crystal thin film growth on Si substrate with oxide buffer layer

〇Osamu Nakagawara¹ (1.I-PEX Piezo Solutions Inc.)

Keywords:

piezoelectric thin film,single crystal,epitaxial growth

We have succeeded in growing a single-crystal PZT thin film on a Si substrate with ZrO2 buffer layer. Single-crystal PZT films show excellent characteristics such as high piezoelectric constant (d31 = 250 pm/V), high residual polarization (Pr > 40 μC/cm2), low dielectric constant (εr = 400-450), and high reliability. We have already commercialized the full-coating wafer, and a piezoelectric MEMS foundry has been established to support the development of piezoelectric devices.