[22p-P04-1~18] 13.7 Compound and power devices, process technology and characterization

English Presentation

[22p-P04-6] Annealing in Oxygen ambient of In-based contact for Mg-doped p-GaN

〇MariaEmma Castil Villamin¹, Naotaka Iwata¹ (1.Toyota Tech Inst)

Keywords:

low temperature contact annealing,Mg-doped GaN

Low contact resistance electrodes for p-GaN are essential for improvement of p-GaN gate power HEMT performance as well as for realization of C-MOS integrated p-GaN devices. Furthermore, for localized activation annealing of p-GaN using excimer laser, low annealing temperature is required, so as not to cause unintended activation in other regions. In a previous study, we evaluated the perfomance of In-based low-temperature annealed contacts. In this study, we explore the effect of oxygen ambient to further enhance the low-temperature annealing of the In-based contact for p-GaN. Specifically, the effect of oxygen ambient annealing is evaluated using circular transmission line measurement (CTLM) and material surface morphologies the In-based contact as a function temperature are also investigated.