[22p-P04-1~18] 13.7 Compound and power devices, process technology and characterization | The 71st JSAP Spring Meeting 2024

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Poster presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[22p-P04-1~18]13.7 Compound and power devices, process technology and characterization

Fri. Mar 22, 2024 1:30 PM - 3:30 PM JST
Fri. Mar 22, 2024 4:30 AM - 6:30 AM UTC

P04 (Building No. 9)

[22p-P04-1]AlGaN/GaN vertical devices on Si substrates with highly resistive strained layer superlattice as the current blocking layer

〇Toshiharu Kubo¹, Takaya Koike¹, Toshiki Kamiya¹, Takashi Egawa¹ (1.Nagoya Inst. Tech.)

[22p-P04-2]Evaluation of endurance characteristics of nonvolatile memory using GaN/AlN resonant tunneling diodes

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

[22p-P04-3]On-Wafer Hall measurement method with ohmic formation using high voltage pulses

〇Kazuki Kodama¹, Daisuke Ueda¹, Osamu Tatebayashi², Makoto Masuda³, Antonio Fermin³, Tadao Hashimot⁴ (1.NYCU, 2.Yamamotogiken, 3.Seikenn, 4.SixPoint Meterials)

[22p-P04-4]Study of Vth dependence on Mg concentration of GaN MOSFETs with Al-doped channel

〇Tsurugi Kondo¹, Katsunori Ueno¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Tomoyuki Suwa² (1.Fuji Electric, 2.NICHe, Tohoku Univ.)

[22p-P04-5]Characterization of near-conduction-band gap state in Mg-ion-implanted GaN after two-step annealing using MOS structure

〇Uryu Ra¹, Yuki Hatakeyama¹, Masamichi Akazawa¹ (1.RCIQE,Hokkaido Univ.)

English Presentation

[22p-P04-6]Annealing in Oxygen ambient of In-based contact for Mg-doped p-GaN

〇MariaEmma Castil Villamin¹, Naotaka Iwata¹ (1.Toyota Tech Inst)

[22p-P04-7]Evaluation of gap states near conduction band in the vicinity of MOS interface of Mg- and N-ion-co-implanted GaN after ultra-high-pressure annealing

〇Yuki Hatakeyama¹, Tetsu Kachi², Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ., 2.IMaSS, Nagoya Univ.)

[22p-P04-8]Assessment of effects of 850℃ annealing on surface and bulk defects of Mg-ion implanted GaN using MOS structure (2)

〇Genta Shindo¹, Yuki Hatakeyama¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

[22p-P04-9]Impact of interface formation process on properties of photoelectrochemically etched p-GaN MOS interfaces

〇Yining Jiao¹, Takahide Nukariya¹, Umi Takatsu¹, Taketomo Sato¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

[22p-P04-10]Study on Secondary Rectification Circuit in MHz GaN-Wireless Power Transmission

〇Toshihide Ide^1,2, Mitsuaki Shimizu^1,2, Noriyuki Takada¹ (1.AIST RIAEP, 2.NU-AIST GaN-OIL)

[22p-P04-11]Flat-band Voltage Shift of GaN-MOS Capacitors with Floating Gate Structure

〇Xigen Li¹, Manato Deki², Shun Lu¹, Hirotaka Watanabe³, Naoki Fujimoto³, Shugo Nitta³, Yoshio Honda^1,2,3, Hiroshi Amano^1,2,3 (1.Dept. of Elec. Nagoya Univ., 2.Nagoya Univ. D-center, 3.Nagoya Univ. IMaSS)

[22p-P04-12]Characterization of mist-Al₂O₃/n-GaN Structures Fabricated on Free-standing GaN Substrates

〇Zenji Yatabe¹, Masaya Fukumitsu¹, Hadirah Radzuan¹, Keigo Bito¹, Ryota Ochi², Yusui Nakamura¹, Taketomo Sato² (1.Kumamoto Univ., 2.Hokkaido Univ.)

[22p-P04-13]Characterization of noble gas plasma-induced defects in n-GaN

〇Yuta Kuwayama¹, Manato Fujitsuna¹, Kazuki Tanaka¹, Mayu Oshima¹, Seiji Nakamura¹ (1.Tokyo Metropolitan Univ.)

[22p-P04-14]Characterization of plasma-induced defects in GaN by the reverse bias annealing (2)

〇MAYU OSHIMA¹, MANATO FUJITSUNA¹, KAZUKI TANAKA¹, YUTA KUWAYAMA¹, SEIJI NAKAMURA¹ (1.TokyoMetropolitanUniv.)

[22p-P04-15]Characterization of displacement currents in the I-V characteristics of Ni/n-GaN Schottky contacts

〇Hiroki Imabayashi¹, Kentaro Kawanishi¹, Hiroshi Ohta², Tomoyoshi Mishima², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

[22p-P04-16]Interface evaluation of SiC pMOSFET with charge pumping method

〇Kotaro Ano¹, Kuniyuki Kakushima¹, Takuya Hoshii¹, KaKazuo Tsutsui¹, Hitoshi Wakabayashi¹, Takashi Yoda¹, Takayuki Oba¹ (1.Tokyo tech.)

[22p-P04-17]Double-Implanted SiC Superjunction UMOSFET to Suppress Bipolar Degradation

〇Kensuke Takenaka¹, Takeshi Tawara¹, Syunki Narita², Shinsuke Harada¹ (1.AIST, 2.Fuji Electric)